WebNov 15, 2004 · The etching characteristics of LiNbO3 and LiTaO3 single crystals have been investigated by performing plasma reactive ion etching (RIE) with CF4/Ar, CF4/H2, and CF2/Ar/H2 gas mixtures. The etched surface was evaluated by atomic force microscopy and X‐ray diffraction. The in situ surface temperature of the sample was measured during RIE. … WebSep 1, 2006 · The implantation of LiNbO3 with 5 MeV O2+ ions has been examined as a means of increasing the rate of subsequent reactive ion etching in CF4/CHF3 plasmas. The etch rate of LiNbO3 implanted at a dose… Expand 6 Effects of ion implantation on surface composition and enhanced etching in LiNbO3 Shao Tianhao, J. Xinyuan, Shang Wei, Feng …
Garal Das auf LinkedIn: Recent Advances in Reactive Ion Etching …
WebApr 2, 2024 · A new oblique method to etch LiNbO 3 memory cells at the surface of X-cut bulk crystals was proposed in this study. The process includes mask fabrication, oblique etching, and wet corrosion cleaning. The etching angle highly approaches 83° to achieve better polarization retention than others with etching angles of 0° and 70°. WebJan 11, 2024 · The LiNbO 3 etching process in halogen-containing gas discharges has a relatively low etching rate. The etching rate is usually between 50 and 150 nm min −1 when the power of the inductivity-coupled plasma (ICP) power source is below 1000 W, [ 2, 3, 8, 9] but it can be increased to 350 nm min −1 by raising the applied power up to 2000 W [ 10, … flare it tool tennis
Reactive ion beam etching characteristics of LiNbO3
WebThe etching characteristics of LiNbO3and LiTaO3single crystals have been investigated by performing plasma reactive ion etching (RIE) with CF4/Ar, CF4/H2, and CF2/Ar/H2gas mixtures. The etched surface was evaluated by atomic force microscopy and X-ray diffraction. The in situ surface temperature of the sample was measured during RIE. WebSep 12, 2001 · The etching characteristics of a LiNbO 3 single crystal have been investigated using plasma reactive ion etching (RIE) with a mixture of CF /Ar/H. The etching rate of LiNbO with the mixture of CF /Ar/H gases was evaluated. The etching surface was evaluated by atomic force microscopy, X-ray diffraction and X-ray photoelectron spectroscopy … WebWe describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10‐μm total pressure are discussed.… Expand 49 Microfabrication of LiNbO3 by Reactive Ion-Beam Etching S. Matsui, Toshiya Yamato, H. Aritome, S. Namba Physics 1980 can squirrels eat raw pumpkin seeds